ds30436 rev. 1 - 2 1 of 3 DMMT5551 www.diodes.com diodes incorporated DMMT5551 matched npn small signal surface mount transistor epitaxial planar die construction complementary pnp type available (dmmt5401) ideal for medium power amplification and switching intrinsically matched npn pair (note 1) 2% matched tolerance, h fe , v ce(sat) , v be(sat) 1% matched tolerance, available (note 2) also available in lead free version characteristic symbol DMMT5551 unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 3) i c 200 ma power dissipation (note 3, 4) p d 300 mw thermal resistance, junction to ambient (note 3) r ja 417 k/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a m j l d f b c h k c 2 b 2 e 2 b 1 e 1 c 1 mechanical data case: sot-26, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 8, on page 2 terminal connections: see diagram marking (see page 2): k4r ordering & date code information: see page 2 weight: 0.006 grams (approx.) c 2 e 2 e 1 c 1 b 2 b 1 c 2 e 2 e 1 c 1 b 2 b 1 notes: 1. built with adjacent die from a single wafer. 2. contact the diodes, inc. sales department. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested p ad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. maximum combined dissipation. sot-26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d 0.95 f 0.55 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 0 8 all dimensions in mm t c u d o r p w e n
ds30436 rev. 1 - 2 2 of 3 DMMT5551 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 5) collector-base breakdown voltage v (br)cbo 180 v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 160 v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 10 a, i c = 0 collector cutoff current i cbo 50 na a v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c emitter cutoff current i ebo 50 na v eb = 4.0v, i c = 0 on characteristics (note 5) dc current gain (note 6) h fe 80 80 30 250 i c = 1.0ma, v ce = 5.0v i c = 10ma, v ce = 5.0v i c = 50ma, v ce = 5.0v collector-emitter saturation voltage v ce(sat) 0.15 0.20 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) 1.0 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo 6.0 pf v cb = 10v, f = 1.0mhz, i e = 0 small signal current gain h fe 50 250 v ce = 10v, i c = 1.0ma, f = 1.0khz current gain-bandwidth product f t 100 300 mhz v ce = 10v, i c = 10ma, f = 100mhz noise figure nf 8.0 db v ce = 5.0v, i c = 200 a, r s = 1.0k f = 1.0khz ordering information (note 7) device packaging shipping DMMT5551-7 sot-26 3000/tape & reel marking information k4r ym k4r = product type marking code ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd t c u d o r p w e n notes: 5. short duration test pulse used to minimize self-heating effect. 6. the dc current gain, h fe , (matched at i c = 10ma and v ce = 5v) collector emitter saturation voltage, v ce(sat) , and base emitter saturation voltage, v be(sat) are matched with typical matched tolerances of 1% and maximum of 2%. 7. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 8. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number a bove. example: DMMT5551-7-f. year 2003 2004 2005 2006 2007 2008 2009 code pr st u vw
ds30436 rev. 1 - 2 3 of 3 DMMT5551 www.diodes.com t c u d o r p w e n 1 10 1000 100 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fig. 5, gain bandwidth product vs. collector current v= 5v ce 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 . 0 0.1 1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fig. 4, base emitter voltage vs. collector current v=5v ce t = 150c a t=25c a t = -50c a 1 10 1000 100 1 10 100 h , dc current fe gain (normalized) i , collector current (ma) c fig. 3, dc current gain vs collector current v= 5v ce t = 150c a t = 25c a t = -50c a 0.04 0.05 0.06 0.07 0.08 0.09 0.15 0.14 0.13 0.12 0.11 0.10 1 10 100 100 0 v,c o llect o rt o emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2, collector emitter saturation voltage vs. collector current i c i b =10 t = 150c a t = 25c a t = -50c a 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient temperature 150 200 250 300 350 0
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